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| STB/P434S S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 40V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220 and TO-263 Package. ID 60A RDS(ON) (m) Max 9.2 @ VGS=10V 11.5 @ VGS=4.5V D D G S G D S G STP SERIES TO-220 STB SERIES TO-263(DD-PAK) S ABSOLUTE MAXIMUM RATINGS ( T A=25 C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 40 20 TC=25C TC=70C 60 48 176 91 TC=25C TC=70C 62.5 40 -55 to 150 Units V V A A A mJ W W C Sigle Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case a a 2 62.5 C/W C/W Thermal Resistance, Junction-to-Ambient Details are subject to change without notice. Nov,14,2008 1 www.samhop.com.tw STB/P434S Ver 1.0 ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units V 1 100 uA nA OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V , ID=250uA VDS=32V , VGS=0V 40 VGS= 20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VDS=VGS , ID=250uA VGS=10V , ID=30A VGS=4.5V , ID=25A VDS=10V , ID=30A 1.3 1.7 7.6 8.8 18 3 9.2 11.5 V m ohm m ohm S pF pF pF DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr tD(OFF) tf Qg Qgs Qgd Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDS=20V,VGS=0V f=1.0MHz 1160 211 135 VDD=20V ID=1A VGS=10V RGEN=3.3 ohm VDS=20V,ID=30A,VGS=10V VDS=20V,ID=30A,VGS=4.5V VDS=20V,ID=30A, VGS=10V 17 24 59 11 20 10 2.1 5 ns ns ns ns nC nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Diode Forward Voltage b 10 0.84 1.3 A V VGS=0V,IS=10A Notes _ a.Surface Mounted on FR4 Board,t < 10sec. _ _ b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.Starting TJ=25C,L=0.5mH,VDD = 20V.(See Figure13) Nov,14,2008 2 www.samhop.com.tw STB/P434S Ver 1.0 100 V G S =10V V G S =4V V G S =3.5V 60 80 60 ID, Drain Current(A) ID, Drain Current(A) 48 36 -55 C 24 T j=125 C 12 0 25 C 40 V G S =3V 20 V G S =2.5V 0 0 0.5 1 1.5 2 2.5 3 0 0.7 1.4 2.1 2.8 3.5 4.2 VDS, Drain-to-Source Voltage(V) VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 20 Figure 2. Transfer Characteristics 2.0 1.8 1.6 1.4 1.2 1.0 0 VGS=4.5V ID=25A VGS=10V ID=30A 16 12 VGS=4.5V 8 VGS=10V 4 1 1 20 40 60 80 100 RDS(on), On-Resistance Normalized RDS(on)(m ) 0 25 50 75 100 125 ID, Drain Current(A) Tj, Junction Temperature( C ) 150 T j ( C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA 1.40 ID=250uA 1.30 1.20 1.10 1.00 0.90 0.80 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( C ) Tj, Junction Temperature( C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Nov,14,2008 3 www.samhop.com.tw STB/P434S Ver 1.0 30 25 20 60 Is, Source-drain current(A) ID=30A 20 125 C 25 C RDS(on)(m ) 125 C 15 10 75 C 5 0 25 C 10 0 2 4 6 8 10 1 0 0.24 0.48 0.72 0.96 1.20 VGS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 1800 Figure 8. Body Diode Forward Voltage Variation with Source Current 10 8 6 4 2 0 0 3 6 9 12 18 21 24 27 Qg, Total Gate Charge(nC) VGS, Gate to Source Voltage(V) 1500 C, Capacitance(pF) C iss 1200 900 600 Css o 300 VS=0 D 2V ID=0 3A C rss 0 0 5 10 15 20 25 30 VDS, Drain-to-Source Voltage(V) Figure 9. Capacitance Figure 10. Gate Charge 1000 500 ID, Drain Current(A) 100 R D Switching Time(ns) 100 TD(off) Tr Tf ON S( )L im it 1m 10 DC 10 0u s s TD(on) ms 10 10 1 1 VDS=20V,ID=1A VGS=10V 3 10 100 1 0.1 VGS =10V S ingle P ulse T A=25 C 1 10 40 100 Rg, Gate Resistance() VDS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Nov,14,2008 4 www.samhop.com.tw STB/P434S Ver 1.0 15V V (B R )DS S tp DR IV E R V DS L RG 20V D.U.T IAS tp 0.01 + V DD - IAS Unclamped Inductive Waveforms Figure 13b. Unclamped Inductive Test Circuit Figure 13a. 2 1 D=0.5 r(t),Normalized E ffective T ransient T hermal Impedance 0.2 0.1 0.1 0.05 0.02 0.01 S ingle P uls e P DM t1 t2 1. 2. 3. 4. R J C (t)=r (t) * R J C R J C =S ee Datas heet T J M-T C = P * R J C (t ) Duty C ycle, D=t1/t2 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 S quare Wave P uls e Duration (ms ec) F igure 14. Normalized T hermal T rans ient Impedance C urve Nov,14,2008 5 www.samhop.com.tw STB/P434S Preliminary PACKAGE OUTLINE DIMENSIONS TO-220 Nov,14,2008 6 www.samhop.com.tw STB/P434S Ver 1.0 PACKAGE OUTLINE DIMENSIONS TO-263AB Nov,14,2008 7 www.samhop.com.tw STB/P434S Ver 1.0 TO-220/263AB Tube 17.5 7.67 + 0.20 5.70 2.35 15.7 + 0.2 7.2 + 0.1 3.7 + 0.2 5.4 + 0.2 3.5 + 0.2 2.6 5.60 + 0.20 12.40 2.6 + 0.2 5.40 + 0. 0.5 + 0.1 536 + 1 5.10 4.30 2.50 ANTISTATIC 1.70 5.80 32 Nov,14,2008 8 www.samhop.com.tw |
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